A monolithic cmos-mems 3-axis accelerometer with a low-noise, low-power dual-chopper amplifier

Hongwei Qu, Deyou Fang, Huikai Xie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

This paper reports the process development, interface circuit design and device characterization of a monolithically integrated 3-axis capacitive accelerometer with a single proof mass. An improved DRIE post-CMOS MEMS process has been developed, which provides robust single-crystal silicon structures in all three axes and greatly reduces undercut of comb fingers in dry release. A low-noise, low-power, dual–chopper amplifier is designed for each axis, which consumes only 1 mW power. With a 40dB on-chip amplification, the measured sensitivities of the lateral-and z-axis accelerometers are 560 mV/g and 320 mV/g, respectively, which can be decreased by simply decreasing the amplitude of the modulation signal. The over-all noise floors of the lateral-and z-axis are 12 μg/√Hz and 110 μg/√Hz, respectively when tested around 200 Hz.

Original languageEnglish
Title of host publication2006 Solid-State Sensors, Actuators, and Microsystems Workshop, Hilton Head 2006
EditorsThomas W. Kenny, Leland Spangler
PublisherTransducer Research Foundation
Pages224-227
Number of pages4
ISBN (Electronic)0964002469, 9780964002463
Publication statusPublished - 2006
Externally publishedYes
Event13th Solid-State Sensors, Actuators, and Microsystems Workshop, Hilton Head 2006 - Hilton Head Island, United States
Duration: 4 Jun 20068 Jun 2006

Publication series

NameTechnical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Conference

Conference13th Solid-State Sensors, Actuators, and Microsystems Workshop, Hilton Head 2006
Country/TerritoryUnited States
CityHilton Head Island
Period4/06/068/06/06

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