A magnetoelectric memory cell with coercivity state as writing data bit

Commercial magnetic recording media employ magnetic-field-induced two different magnetization states ±M to write data. In this paper, we present a magnetic memory cell in which electric-field-induced two different coercive-field H_c states (i.e., low- H_c and high- H _c) rather than ±M are served as writing data bits. A multiferroic magnetoelectric bilayer with Fe0.93 Ge0.07 film grown on fully poled ferroelectric BiScO₃ -PbTiO₃ substrate, exhibiting a large electric-field modulation of H_c, is used for illustration of such a prototype electric-write/magnetic-read memory cell which is nonvolatile. The reading process of the different coercive-field H_c information written by electric fields is demonstrated by using magnetoresistance read head.