@inproceedings{aa961e0bbc6349988b4cd99182c286dd,
title = "A Low-loss D-band Chip-to-Waveguide Transition Using Unilateral Fin-line Structure",
abstract = "This paper presents a D-band interconnect realized using unilateral finline structure. The interconnect consists of a microstrip line implemented on a 75μm-thick SiC substrate. The line then couples to a unilateral finline taper that is mounted in the E-plane of a standard WR-6.5 D-band waveguide. The interconnect achieves low insertion loss and covers very wide frequency range. The measured minimum insertion loss is 0.67 dB and the maximum is 2 dB per transition across the entire D-band covering the frequency range 110-170 GHz. The transition does not require any galvanic contacts nor any special processing and can be implemented in any of the commercially available semiconductor technologies. This solution provides low-loss wideband packaging technique that enables millimeter-wave systems assembly using a high-performance simple approach.",
keywords = "D-band, fin-line, interconnects, millimeter waves, THz, waveguide transition",
author = "Ahmed Hassona and He, \{Zhongxia Simon\} and Omid Habibpour and Vincent Desmaris and Vessen Vassilev and Songyuan Yang and Victor Belitsky and Herbert Zirath",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
year = "2018",
month = aug,
day = "17",
doi = "10.1109/MWSYM.2018.8439643",
language = "English",
isbn = "9781538650677",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "390--393",
booktitle = "Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018",
address = "United States",
}