@inproceedings{18c5297a1a8547aa8933105c61112981,
title = "A high power amplifier at Ka-band",
abstract = "In this paper, we describe the design of a high power amplifier at Ka band. To achieve the output power of more than 30dBm, at first we design a one-stage power amplifier, and then design a two-stage amplifier circuit through the directional coupler, and ultimately achieve 31dBm of output power. The design is based on GaN materials to build a physical model of the HEMT. The S-parameters are extracted by using the HFSS software to build the physical structure of the passive components. At last we get a multi-stage amplifier design through ADS simulation.",
keywords = "Coupler, GaN, Ka-band, high power amplifiers",
author = "Yang Jiansong and Guo Dechun",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014 ; Conference date: 26-07-2014 Through 29-07-2014",
year = "2014",
month = dec,
day = "18",
doi = "10.1109/APCAP.2014.6992782",
language = "English",
series = "Proceedings of 3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1380--1383",
booktitle = "Proceedings of 3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014",
address = "United States",
}