A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials

Lili Jiang; Bin Wu; Hongtao Liu; Yuan Huang; Jianyi Chen; Dechao Geng; Hongjun Gao; Yunqi Liu

doi:10.1002/adma.201302941

A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials

Lili Jiang
, Bin Wu
, Hongtao Liu
, Yuan Huang
, Jianyi Chen
, Dechao Geng
, Hongjun Gao^*
, Yunqi Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A general method using a biased atomic force microscopy tip that allows a qualitative, fast, and reliable determination of key electronic properties such as metallic, n-, or p-doped characteristics has been reported for the first time. This method eliminates the detrimental effect of contact in the traditional transport measurement and is much simpler than the common-electrostatic force microscopy detection method, thus providing a powerful tool for fast characterizations of nanomaterials.

Original language	English
Pages (from-to)	7015-7019
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	48
DOIs	https://doi.org/10.1002/adma.201302941
Publication status	Published - 23 Dec 2013
Externally published	Yes

Keywords

asymmetric polarization
atomic force microscopy
charge carrier type
two-dimensional materials

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10.1002/adma.201302941

Cite this

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abstract = "A general method using a biased atomic force microscopy tip that allows a qualitative, fast, and reliable determination of key electronic properties such as metallic, n-, or p-doped characteristics has been reported for the first time. This method eliminates the detrimental effect of contact in the traditional transport measurement and is much simpler than the common-electrostatic force microscopy detection method, thus providing a powerful tool for fast characterizations of nanomaterials.",

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T1 - A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials

AU - Jiang, Lili

AU - Wu, Bin

AU - Liu, Hongtao

AU - Huang, Yuan

AU - Chen, Jianyi

AU - Geng, Dechao

AU - Gao, Hongjun

AU - Liu, Yunqi

PY - 2013/12/23

Y1 - 2013/12/23

N2 - A general method using a biased atomic force microscopy tip that allows a qualitative, fast, and reliable determination of key electronic properties such as metallic, n-, or p-doped characteristics has been reported for the first time. This method eliminates the detrimental effect of contact in the traditional transport measurement and is much simpler than the common-electrostatic force microscopy detection method, thus providing a powerful tool for fast characterizations of nanomaterials.

AB - A general method using a biased atomic force microscopy tip that allows a qualitative, fast, and reliable determination of key electronic properties such as metallic, n-, or p-doped characteristics has been reported for the first time. This method eliminates the detrimental effect of contact in the traditional transport measurement and is much simpler than the common-electrostatic force microscopy detection method, thus providing a powerful tool for fast characterizations of nanomaterials.

KW - asymmetric polarization

KW - atomic force microscopy

KW - charge carrier type

KW - two-dimensional materials

UR - https://www.scopus.com/pages/publications/84890786395

U2 - 10.1002/adma.201302941

DO - 10.1002/adma.201302941

M3 - Article

AN - SCOPUS:84890786395

SN - 0935-9648

VL - 25

SP - 7015

EP - 7019

JO - Advanced Materials

JF - Advanced Materials

IS - 48

ER -

A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials

Abstract

Keywords

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