A fabrication and magnetic properties study on Al doped Zn 0.99Co0.01O dilution ferromagnetic semiconductors

Yu Zhou, Li Xiang*, Long Xue, Cheng Xing-Wang, Liu Ying, Cao Chuan-Bao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

This paper reports that a chemical method is employed to synthesize Co and Al co-doped ZnO, namely, Zn0.99-xCo0.01AlxO dilution semiconductors with the nominal composition of x 0, 0.005 and 0.02. Structural, magnetic and optical properties of the produced samples are studied. The results indicate that samples sintered in air under the temperatures of 500 °C show a single wurtzite ZnO structure and the ferromagnetism decreases with the increase of Al. Photoluminescence spectra of different Al-doped samples indicate that increasing Al concentration in Zn0.99-xCo 0.01AlxO results in a decrease of Zni, which resembles the trend of the ferromagnetic property of the corresponding samples. Therefore, it is deduced that the ferromagnetism observed in the studied samples originates from the interstitial defect of zinc (Zni) in the lattice of Co-doped ZnO.

Original languageEnglish
Pages (from-to)3040-3043
Number of pages4
JournalChinese Physics B
Volume18
Issue number7
DOIs
Publication statusPublished - 2009

Keywords

  • DMSs
  • Doping
  • ZnO

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