A design for high thermally conductive and electrically semiconducting graphene-based hybrid structures

The semimetal characteristic of graphene seriously obstructs its extensive application as a heat-dissipation material in electronic devices. Therefore, it should be urgent to design semiconducting graphene-based structures of high thermal conductivity (TC). In this paper, we construct the hybrid structures composed of graphene and other carbon-based monolayers such as BC₃, C₃N, and BC₆N. It is shown that the hybrid structures may be kept to be semiconducting while their TCs will be increased with the increasing of the graphene zone width. By comparing the TCs of the hybrid structures affiliated with the side comb-type and plane-type structures, we find that the side plane-type structures can enhance the TCs more strongly than the comb-type ones. A further study on the isotope doping shows that the isotope doping in the side structures may induce the increasing of TC. This research provides an important reference for designing the semiconducting and high-TC graphene-based hybrid materials.