@inproceedings{83924d98b8604d76975486f1b5289c46,
title = "A Compact Three-phase Chip-on-Chip SiC Integrated Power module with Low Thermal Resistance and Gate Signal Interference",
abstract = "To fully take the high-frequency advantage of silicon carbide (SiC) devices, this article presents a three-phase integrated power module based on Chip-on-Chip (CoC) structure. The proposed CoC module highly integrates a SiC three-phase bridge and driving circuits, using copper-molybdenum alloy spacer to replace traditional bonding wires, the power loop parasitic inductance is 4.5nH and gate loop parasitic inductance is 2.2nH, reduced by 80\% compared with commercial intelligent power module (IPM) and the overall size is only 28.5mm∗18.5mm∗5.5mm. An analytical interference model of the input of integrated gate driver is considered, and proposing a CoC and flip-chip structure to achieve low common-mode EMI and low gate signal interference. The double-sided cooling structure reduces the thermal resistance of both SiC chips and driver chips.",
keywords = "Chip-on-Chip, EMI, Intelligent power module, Silicon carbide",
author = "Jiaxin Liu and Chenhang Zeng and Heng Zhang and Cai Chen and Yong Kang and Heng Liu and Cheng Liu and Yuwei Zhang and Laifeng Shi",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Energy Conversion Congress and Exposition, ECCE 2024 ; Conference date: 20-10-2024 Through 24-10-2024",
year = "2024",
doi = "10.1109/ECCE55643.2024.10861605",
language = "English",
series = "2024 IEEE Energy Conversion Congress and Exposition, ECCE 2024 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "6668--6673",
booktitle = "2024 IEEE Energy Conversion Congress and Exposition, ECCE 2024 - Proceedings",
address = "United States",
}