TY - GEN
T1 - A Broadband and Low-loss Packaging Technique Using Beam-leads Interconnection
AU - Gao, Gang
AU - Zhou, Ziqiao
AU - Shan, Qi
AU - Dong, Kai
AU - Cui, Yaze
AU - Yu, Weihua
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - This paper presents a broadband, low-loss wave-guide-to-chip transition for monolithic microwave integrated circuit packaging. By introducing a secondary probe perpendicular to the traditional E-plane probe, a cross-probe structure is formed, substantially improving coupling efficiency. The probe and chip are interconnected using beam-lead technology, which reduces parasitic effects and broadens operational bandwidth. To validate this concept, an amplifier module employing this packaging technique was designed, fabricated, and tested. The experimental results agree well with the datasheet of the chip. Across the entire D-band, the measured small-signal gain ranges from 15.1 to 20 dB, while the calculated average insertion loss per transition remains below 0.7 dB.
AB - This paper presents a broadband, low-loss wave-guide-to-chip transition for monolithic microwave integrated circuit packaging. By introducing a secondary probe perpendicular to the traditional E-plane probe, a cross-probe structure is formed, substantially improving coupling efficiency. The probe and chip are interconnected using beam-lead technology, which reduces parasitic effects and broadens operational bandwidth. To validate this concept, an amplifier module employing this packaging technique was designed, fabricated, and tested. The experimental results agree well with the datasheet of the chip. Across the entire D-band, the measured small-signal gain ranges from 15.1 to 20 dB, while the calculated average insertion loss per transition remains below 0.7 dB.
KW - Chip interconnection
KW - D-band
KW - packaging technique
KW - waveguide transition
UR - https://www.scopus.com/pages/publications/105019486374
U2 - 10.1109/IWS65943.2025.11177837
DO - 10.1109/IWS65943.2025.11177837
M3 - Conference contribution
AN - SCOPUS:105019486374
T3 - 2025 IEEE MTT-S International Wireless Symposium, IWS 2025 - Proceedings
BT - 2025 IEEE MTT-S International Wireless Symposium, IWS 2025 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th IEEE MTT-S International Wireless Symposium, IWS 2025
Y2 - 19 May 2025 through 22 May 2025
ER -