TY - GEN
T1 - A bandgap reference in 65nm CMOS
AU - Zhang, Jun An
AU - Li, Guang Jun
AU - Yan, Bo
AU - Luo, Pu
AU - Yang, Yu Jun
AU - Zhang, Rui Tao
AU - Li, Xi
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/10/12
Y1 - 2016/10/12
N2 - A bandgap reference circuit with voltage and current output is presented. Operational transconductance amplifier(OTA) have been used for a higher DC power supply rejection rate(PSRR) under small gate length of MOSfet. Both telescopic and folded OTA and low threshold voltage MOSfet have been used to ensure the circuit at suitable operation points under every PVT(process, source voltage and temperature) corner. Two opposite temperature coefficient resistors have been connected in series to obtain a temperature independent resistor for voltage reference's generation. This bandgap reference is implemented in a 65nm CMOS technology, occupies 0.75mm×0.67mm including bond pads, Measured results show that this circuit can operate at supply voltage from 1.1V to 1.3V, and the temperature coefficient of voltage output is 30.9ppm/C with 61dB PSRR (DC, 25C), and the temperature coefficient of current output is 51.6ppm/C with 69dB PSRR (DC, 25 C), among-55 C∼125 C without any trimming or calibration.
AB - A bandgap reference circuit with voltage and current output is presented. Operational transconductance amplifier(OTA) have been used for a higher DC power supply rejection rate(PSRR) under small gate length of MOSfet. Both telescopic and folded OTA and low threshold voltage MOSfet have been used to ensure the circuit at suitable operation points under every PVT(process, source voltage and temperature) corner. Two opposite temperature coefficient resistors have been connected in series to obtain a temperature independent resistor for voltage reference's generation. This bandgap reference is implemented in a 65nm CMOS technology, occupies 0.75mm×0.67mm including bond pads, Measured results show that this circuit can operate at supply voltage from 1.1V to 1.3V, and the temperature coefficient of voltage output is 30.9ppm/C with 61dB PSRR (DC, 25C), and the temperature coefficient of current output is 51.6ppm/C with 69dB PSRR (DC, 25 C), among-55 C∼125 C without any trimming or calibration.
KW - 65nm CMOS
KW - bandgap reference circuit
KW - low voltage circuit design technique
UR - http://www.scopus.com/inward/record.url?scp=84992741053&partnerID=8YFLogxK
U2 - 10.1109/INEC.2016.7589270
DO - 10.1109/INEC.2016.7589270
M3 - Conference contribution
AN - SCOPUS:84992741053
T3 - Proceedings - International NanoElectronics Conference, INEC
BT - 7th IEEE International Nanoelectronics Conference 2016, INEC 2016
PB - IEEE Computer Society
T2 - 7th IEEE International Nanoelectronics Conference, INEC 2016
Y2 - 9 May 2016 through 11 May 2016
ER -