A 800MHz-3.8GHz 1.6-dB NF Inductorless Wideband CMOS LNA for Wireless Communications

In this paper, we present a inductorless, wide-band, low-noise balun amplifier (LNA) for multistandard applications. The LNA adopts a complementary current-reuse common source(CS) amplifier, combined with a low-current active feedback to achieve high voltage-gain and wideband input matching. In additiona, The LNA employs a common gate(CG) - common source load to achieve differential output. This solve the problem of the trade-off between low noise and high linearity in the circuit. Our LNA has higher gain and lower NF compared with the conventional CS- active feedback LNA. By 65-nm RF CMOS process, the LNA can achieve a voltage gain of 26 dB, a IIP3 of -6.6 dBm at 2.4 GHz and an NF of 1.6-1.8 dB over a 3-dB bandwidth of 0.8-3.8GHz in theory. It consumes 4.4 mA from a 1.2- V supply and occupies an active area as compact as 0.046 mm2.