A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology

Qin Ge; Wei Liu; Bo Xu; Feng Qian; Changfei Yao

doi:10.1088/1674-4926/38/3/035001

A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology

Qin Ge^*, Wei Liu, Bo Xu, Feng Qian, Changfei Yao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 μm GaAs pseudomorphic HEMT (PHEMT) technology, demonstrated a flat small signal gain of 12:4 ± 2 dB with a minimum saturated output power (Psat) of 14.2 dBm from 77 to 100 GHz. The typical Psat is better by 16.3 dBm with a flatness of 0.4 dB and the maximum power added efficiency is 6% between 77 and 92 GHz. This result shows that the amplifier delivers output power density of about 470 mW/mm with a total gate output periphery of 100 μm. As far as we know, it is nearly the best power density performance ever published from a single ended GaAs-based PHEMT MMIC at this frequency band.

Original language	English
Article number	035001
Journal	Journal of Semiconductors
Volume	38
Issue number	3
DOIs	https://doi.org/10.1088/1674-4926/38/3/035001
Publication status	Published - Mar 2017
Externally published	Yes

Keywords

GaAs PHEMT
MMIC
Power amplifier
W-band
Wideband

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10.1088/1674-4926/38/3/035001

Cite this

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title = "A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology",

abstract = "A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 μm GaAs pseudomorphic HEMT (PHEMT) technology, demonstrated a flat small signal gain of 12:4 ± 2 dB with a minimum saturated output power (Psat) of 14.2 dBm from 77 to 100 GHz. The typical Psat is better by 16.3 dBm with a flatness of 0.4 dB and the maximum power added efficiency is 6\% between 77 and 92 GHz. This result shows that the amplifier delivers output power density of about 470 mW/mm with a total gate output periphery of 100 μm. As far as we know, it is nearly the best power density performance ever published from a single ended GaAs-based PHEMT MMIC at this frequency band.",

keywords = "GaAs PHEMT, MMIC, Power amplifier, W-band, Wideband",

author = "Qin Ge and Wei Liu and Bo Xu and Feng Qian and Changfei Yao",

note = "Publisher Copyright: {\textcopyright} 2017 Chinese Institute of Electronics.",

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doi = "10.1088/1674-4926/38/3/035001",

language = "English",

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journal = "Journal of Semiconductors",

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T1 - A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology

AU - Ge, Qin

AU - Liu, Wei

AU - Xu, Bo

AU - Qian, Feng

AU - Yao, Changfei

PY - 2017/3

Y1 - 2017/3

N2 - A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 μm GaAs pseudomorphic HEMT (PHEMT) technology, demonstrated a flat small signal gain of 12:4 ± 2 dB with a minimum saturated output power (Psat) of 14.2 dBm from 77 to 100 GHz. The typical Psat is better by 16.3 dBm with a flatness of 0.4 dB and the maximum power added efficiency is 6% between 77 and 92 GHz. This result shows that the amplifier delivers output power density of about 470 mW/mm with a total gate output periphery of 100 μm. As far as we know, it is nearly the best power density performance ever published from a single ended GaAs-based PHEMT MMIC at this frequency band.

AB - A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 μm GaAs pseudomorphic HEMT (PHEMT) technology, demonstrated a flat small signal gain of 12:4 ± 2 dB with a minimum saturated output power (Psat) of 14.2 dBm from 77 to 100 GHz. The typical Psat is better by 16.3 dBm with a flatness of 0.4 dB and the maximum power added efficiency is 6% between 77 and 92 GHz. This result shows that the amplifier delivers output power density of about 470 mW/mm with a total gate output periphery of 100 μm. As far as we know, it is nearly the best power density performance ever published from a single ended GaAs-based PHEMT MMIC at this frequency band.

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KW - MMIC

KW - Power amplifier

KW - W-band

KW - Wideband

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A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology

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Keywords

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