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A 76μW, 58-dB SNDR analog front-end chip for implantable intraocular pressure detection

  • Xiamen University of Technology
  • CAS - Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper proposes a low-power, high-performance and fully-integrated Analog Front-End (AFE) For implantable and real-time intraocular pressure (IOP) detection. It includes full-integrated, subthreshold amplifier and 10bit, 20ks/s low-power successive approximation analog-to-digital converter (SAR ADC). In amplifier pseudo-resistors are realized with subthreshold transistors to achieve G-order value. And it is also paralleled with feedback capacitor to generate high-pass path to restrict DC-offset voltage and low-frequency noise. Low-power SAR ADC is optimized to realize tradeoff between performance and power consumption. The AFE chip is implemented with 0.18 μm CMOS mixed-signal technology. By test results it shows that under 1.8V power supply, peak Signal-to-Noise and Distortion Ratio (SNDR) of AFE is 58.3dB and Effective Number of Bits (ENOB) reaches 9.4bit with only 76μW power consumption, which indicates great potential for IOP application.

Original languageEnglish
Title of host publicationProceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017
EditorsYajie Qin, Zhiliang Hong, Ting-Ao Tang
PublisherIEEE Computer Society
Pages171-174
Number of pages4
ISBN (Electronic)9781509066247
DOIs
Publication statusPublished - 1 Jul 2017
Event12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017 - Guiyang, China
Duration: 25 Oct 2017 → 28 Oct 2017

Publication series

NameProceedings of International Conference on ASIC
Volume2017-October
ISSN (Print)2162-7541
ISSN (Electronic)2162-755X

Conference

Conference12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017
Country/TerritoryChina
CityGuiyang
Period25/10/17 → 28/10/17

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