A 4-8 GHz Fully-Differential Noise Canceling Low Noise Amplifier in 55-nm CMOS

  • Chao Wang*
  • , Xiaoran Li
  • , Zicheng Liu
  • , Fang Han
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

in this paper, a two-stage low noise amplifier(LNA) design is proposed in the 55 nm CMOS process that features a Fully-Differential noise canceling LNA(FD-NCLNA) structure as the first stage. The proposed LNA utilizes inductance to optimize gain and noise characteristics at high frequency and achieves a maximum gain of 18.4 dB and a minimum NF result of 2.5 dB within the 4-8 GHz range.

Original languageEnglish
Title of host publication2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3-4
Number of pages2
ISBN (Electronic)9798331530709
DOIs
Publication statusPublished - 2024
Event2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024 - Hangzhou, China
Duration: 25 Oct 202427 Oct 2024

Publication series

Name2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024

Conference

Conference2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024
Country/TerritoryChina
CityHangzhou
Period25/10/2427/10/24

Keywords

  • NCLNA
  • high frequency
  • noise factor

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