A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS

Zheng Wang; Pei Yuan Chiang; Peyman Nazari; Chun Cheng Wang; Zhiming Chen; Payam Heydari

doi:10.1109/ISSCC.2013.6487670

A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS

Zheng Wang^*
, Pei Yuan Chiang
, Peyman Nazari
, Chun Cheng Wang
, Zhiming Chen
, Payam Heydari

^*Corresponding author for this work

School of Integrated Circuits and Electronics

University of California at Irvine
Peregrine Semiconductor (pSemi)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

77 Citations (Scopus)

Abstract

The vastly under-utilized spectrum in the sub-THz frequency range enables disruptive applications including 10Gb/s chip-to-chip wireless communications and imaging/spectroscopy. Owing to aggressive scaling in feature size and device f_T/f_max, nanoscale CMOS technology potentially enables integration of sophisticated systems at this frequency range. For example, CMOS sub-THz signal sources and TRXs have been reported [1-4], employing techniques such as distributed active radiator (DAR) and super-harmonic signal generator. The lack of RF amplification in CMOS sub-THz TRXs reported in prior work, however, results in low efficiency (and thus higher power dissipation), and high noise-figure (NF). This paper addresses these issues by demonstrating a 210GHz TRX with on-off-keying (OOK) modulation incorporating a 2×2 TX antenna array, a 2×2 spatial combining power amplifier (PA), a fundamental frequency VCO, and a low noise amplifier (LNA) in a 32nm SOI CMOS process (f_T/f_max=250/350GHz).

Original language	English
Title of host publication	2013 IEEE International Solid-State Circuits Conference, ISSCC 2013 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	136-137
Number of pages	2
ISBN (Print)	9781467345132
DOIs	https://doi.org/10.1109/ISSCC.2013.6487670
Publication status	Published - 2013
Event	60th IEEE International Solid-State Circuits Conference, ISSCC 2013 - San Francisco, CA, United States Duration: 17 Feb 2013 → 21 Feb 2013

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	56
ISSN (Print)	0193-6530

Conference

Conference	60th IEEE International Solid-State Circuits Conference, ISSCC 2013
Country/Territory	United States
City	San Francisco, CA
Period	17/02/13 → 21/02/13

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10.1109/ISSCC.2013.6487670

Cite this

Wang, Z., Chiang, P. Y., Nazari, P., Wang, C. C., Chen, Z., & Heydari, P. (2013). A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS. In 2013 IEEE International Solid-State Circuits Conference, ISSCC 2013 - Digest of Technical Papers (pp. 136-137). Article 6487670 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 56). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2013.6487670

Wang, Zheng ; Chiang, Pei Yuan ; Nazari, Peyman et al. / A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS. 2013 IEEE International Solid-State Circuits Conference, ISSCC 2013 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 136-137 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

@inproceedings{5f2f88aca0144bfb8b344981ca2a8231,

title = "A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS",

abstract = "The vastly under-utilized spectrum in the sub-THz frequency range enables disruptive applications including 10Gb/s chip-to-chip wireless communications and imaging/spectroscopy. Owing to aggressive scaling in feature size and device fT/fmax, nanoscale CMOS technology potentially enables integration of sophisticated systems at this frequency range. For example, CMOS sub-THz signal sources and TRXs have been reported [1-4], employing techniques such as distributed active radiator (DAR) and super-harmonic signal generator. The lack of RF amplification in CMOS sub-THz TRXs reported in prior work, however, results in low efficiency (and thus higher power dissipation), and high noise-figure (NF). This paper addresses these issues by demonstrating a 210GHz TRX with on-off-keying (OOK) modulation incorporating a 2{\texttimes}2 TX antenna array, a 2{\texttimes}2 spatial combining power amplifier (PA), a fundamental frequency VCO, and a low noise amplifier (LNA) in a 32nm SOI CMOS process (fT/fmax=250/350GHz).",

author = "Zheng Wang and Chiang, \{Pei Yuan\} and Peyman Nazari and Wang, \{Chun Cheng\} and Zhiming Chen and Payam Heydari",

year = "2013",

doi = "10.1109/ISSCC.2013.6487670",

language = "English",

isbn = "9781467345132",

series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "136--137",

booktitle = "2013 IEEE International Solid-State Circuits Conference, ISSCC 2013 - Digest of Technical Papers",

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note = "60th IEEE International Solid-State Circuits Conference, ISSCC 2013 ; Conference date: 17-02-2013 Through 21-02-2013",

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Wang, Z, Chiang, PY, Nazari, P, Wang, CC, Chen, Z & Heydari, P 2013, A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS. in 2013 IEEE International Solid-State Circuits Conference, ISSCC 2013 - Digest of Technical Papers., 6487670, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 56, Institute of Electrical and Electronics Engineers Inc., pp. 136-137, 60th IEEE International Solid-State Circuits Conference, ISSCC 2013, San Francisco, CA, United States, 17/02/13. https://doi.org/10.1109/ISSCC.2013.6487670

A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS. / Wang, Zheng; Chiang, Pei Yuan; Nazari, Peyman et al.
2013 IEEE International Solid-State Circuits Conference, ISSCC 2013 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2013. p. 136-137 6487670 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 56).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chiang, Pei Yuan

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AU - Wang, Chun Cheng

AU - Chen, Zhiming

AU - Heydari, Payam

PY - 2013

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AB - The vastly under-utilized spectrum in the sub-THz frequency range enables disruptive applications including 10Gb/s chip-to-chip wireless communications and imaging/spectroscopy. Owing to aggressive scaling in feature size and device fT/fmax, nanoscale CMOS technology potentially enables integration of sophisticated systems at this frequency range. For example, CMOS sub-THz signal sources and TRXs have been reported [1-4], employing techniques such as distributed active radiator (DAR) and super-harmonic signal generator. The lack of RF amplification in CMOS sub-THz TRXs reported in prior work, however, results in low efficiency (and thus higher power dissipation), and high noise-figure (NF). This paper addresses these issues by demonstrating a 210GHz TRX with on-off-keying (OOK) modulation incorporating a 2×2 TX antenna array, a 2×2 spatial combining power amplifier (PA), a fundamental frequency VCO, and a low noise amplifier (LNA) in a 32nm SOI CMOS process (fT/fmax=250/350GHz).

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PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Wang Z, Chiang PY, Nazari P, Wang CC, Chen Z, Heydari P. A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS. In 2013 IEEE International Solid-State Circuits Conference, ISSCC 2013 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2013. p. 136-137. 6487670. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC.2013.6487670

A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS

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