@inproceedings{36157d6c1c8a4f26a107184b7428f96e,
title = "A 100-145 GHz area-efficient power amplifier in a 130 nm SiGe technology",
abstract = "A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is designed and measured. This PA has an output power of 12.5-15.5 dBm in a frequency range from 100 GHz to 145 GHz, when the input power is about 2 dBm. The small signal gain is 19 dB and the maximum DC power consumption is 480 mW with a supply voltage of 1.87 V. The peak power added efficiency (PAE) is 6.4\% in D-band. T-junctions are utilized to combine and divide millimeter-wave power. To reduce the PA's loss and chip area, neither a Wilkinson power combiner/divider nor a balun is applied. The chip size is 0.53 mm2 (0.26 mm2 without pads).",
keywords = "D-band, Power amplifier, SiGe",
author = "Mingquan Bao and He, \{Zhongxia Simon\} and Herbert Zirath",
note = "Publisher Copyright: {\textcopyright} 2017 European Microwave Association.; 47th European Microwave Conference, EuMC 2017 ; Conference date: 10-10-2017 Through 12-10-2017",
year = "2017",
month = dec,
day = "19",
doi = "10.23919/EuMC.2017.8231019",
language = "English",
series = "European Microwave Week 2017: {"}A Prime Year for a Prime Event{"}, EuMW 2017 - Conference Proceedings; 47th European Microwave Conference, EuMC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1017--1020",
booktitle = "European Microwave Week 2017",
address = "United States",
}