@inproceedings{fc3cd32a3ce442b6bd6e4664257f4b0b,
title = "3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials",
abstract = "Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.",
author = "Dongyan Jia and Shanjia Xu and Xinqing Sheng",
note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 ; Conference date: 04-11-1999 Through 04-11-1999",
year = "1999",
doi = "10.1109/ICCEA.1999.825130",
language = "English",
isbn = "0780358023",
series = "1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "302--306",
editor = "Gao Benqing and Lu Xiaode",
booktitle = "1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings",
address = "United States",
}