2D Simulations of Kink phenomenon in InAlAs/InGaAs/InP HEMTs

Zhiming Wang; Xiaobin Luo; Weihua Yu; Xin Lv

doi:10.1109/ICMTCE.2013.6812445

2D Simulations of Kink phenomenon in InAlAs/InGaAs/InP HEMTs

Zhiming Wang
, Xiaobin Luo
, Weihua Yu
, Xin Lv

School of Integrated Circuits and Electronics

Beijing Institute of Technology

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

In this paper, a two dimensional (2D) device simulation was used to investigate Kink phenomena in InAlAs/InGaAs HEMT's. Impact ionization was taken into account and it is responsible for the kink. It is found that the accumulation of holes in the gate-source overlap region generated by the impact ionization has the channel electron density increase at the bias point where kink appears. At high drain to source voltage, there is a rapid increase in the drain conductance, and it is known as an on-state breakdown.

Original language	English
Pages	320-323
Number of pages	4
DOIs	https://doi.org/10.1109/ICMTCE.2013.6812445
Publication status	Published - 2013
Event	2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013 - Qingdao, China Duration: 27 Aug 2013 → 29 Aug 2013

Conference

Conference	2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013
Country/Territory	China
City	Qingdao
Period	27/08/13 → 29/08/13

Keywords

Breakdown
HEMTs
Impact ionization
Kink phenomenon
Simulations

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10.1109/ICMTCE.2013.6812445

Cite this

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title = "2D Simulations of Kink phenomenon in InAlAs/InGaAs/InP HEMTs",

abstract = "In this paper, a two dimensional (2D) device simulation was used to investigate Kink phenomena in InAlAs/InGaAs HEMT's. Impact ionization was taken into account and it is responsible for the kink. It is found that the accumulation of holes in the gate-source overlap region generated by the impact ionization has the channel electron density increase at the bias point where kink appears. At high drain to source voltage, there is a rapid increase in the drain conductance, and it is known as an on-state breakdown.",

keywords = "Breakdown, HEMTs, Impact ionization, Kink phenomenon, Simulations",

author = "Zhiming Wang and Xiaobin Luo and Weihua Yu and Xin Lv",

year = "2013",

doi = "10.1109/ICMTCE.2013.6812445",

language = "English",

pages = "320--323",

note = "2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013 ; Conference date: 27-08-2013 Through 29-08-2013",

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TY - CONF

T1 - 2D Simulations of Kink phenomenon in InAlAs/InGaAs/InP HEMTs

AU - Wang, Zhiming

AU - Luo, Xiaobin

AU - Yu, Weihua

AU - Lv, Xin

PY - 2013

Y1 - 2013

N2 - In this paper, a two dimensional (2D) device simulation was used to investigate Kink phenomena in InAlAs/InGaAs HEMT's. Impact ionization was taken into account and it is responsible for the kink. It is found that the accumulation of holes in the gate-source overlap region generated by the impact ionization has the channel electron density increase at the bias point where kink appears. At high drain to source voltage, there is a rapid increase in the drain conductance, and it is known as an on-state breakdown.

AB - In this paper, a two dimensional (2D) device simulation was used to investigate Kink phenomena in InAlAs/InGaAs HEMT's. Impact ionization was taken into account and it is responsible for the kink. It is found that the accumulation of holes in the gate-source overlap region generated by the impact ionization has the channel electron density increase at the bias point where kink appears. At high drain to source voltage, there is a rapid increase in the drain conductance, and it is known as an on-state breakdown.

KW - Breakdown

KW - HEMTs

KW - Impact ionization

KW - Kink phenomenon

KW - Simulations

UR - https://www.scopus.com/pages/publications/84901450778

U2 - 10.1109/ICMTCE.2013.6812445

DO - 10.1109/ICMTCE.2013.6812445

M3 - Paper

AN - SCOPUS:84901450778

SP - 320

EP - 323

T2 - 2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013

Y2 - 27 August 2013 through 29 August 2013

ER -

2D Simulations of Kink phenomenon in InAlAs/InGaAs/InP HEMTs

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