100 mm long, semiconducting triple-walled carbon nanotubes

Qian Wen; Weizhong Qian; Jingqi Nie; Anyuan Cao; Guoqing Ning; Yao Wang; Ling Hu; Qiang Zhang; Jiaqi Huang; Fei Wei

doi:10.1002/adma.200902746

100 mm long, semiconducting triple-walled carbon nanotubes

Qian Wen^*
, Weizhong Qian
, Jingqi Nie
, Anyuan Cao
, Guoqing Ning
, Yao Wang
, Ling Hu
, Qiang Zhang
, Jiaqi Huang
, Fei Wei

^*Corresponding author for this work

Tsinghua University
Peking University
Two Technology St. BDA East District

Research output: Contribution to journal › Article › peer-review

106 Citations (Scopus)

Abstract

Direct growth of 100 mm long, semiconducting triple-walled carbon nanotubes (TWNTs) on Si substrates by chemical vapor depoistion is reported. By tailoring the temperature for a certain gas flow rate, a yield of nearly 90% of centimeterlong TWNTs is obtained. The TWNTs show an unprecedented structural homogeneity, in which each shell maintains a constant chiral index extending over a very large distance (>60mm). The semiconducting TWNTs can be directly fabricated into field-effect transistors. (Figure Presented)

Original language	English
Pages (from-to)	1867-1871
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	16
DOIs	https://doi.org/10.1002/adma.200902746
Publication status	Published - 22 Apr 2010
Externally published	Yes

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10.1002/adma.200902746

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author = "Qian Wen and Weizhong Qian and Jingqi Nie and Anyuan Cao and Guoqing Ning and Yao Wang and Ling Hu and Qiang Zhang and Jiaqi Huang and Fei Wei",

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T1 - 100 mm long, semiconducting triple-walled carbon nanotubes

AU - Wen, Qian

AU - Qian, Weizhong

AU - Nie, Jingqi

AU - Cao, Anyuan

AU - Ning, Guoqing

AU - Wang, Yao

AU - Hu, Ling

AU - Zhang, Qiang

AU - Huang, Jiaqi

AU - Wei, Fei

PY - 2010/4/22

Y1 - 2010/4/22

N2 - Direct growth of 100 mm long, semiconducting triple-walled carbon nanotubes (TWNTs) on Si substrates by chemical vapor depoistion is reported. By tailoring the temperature for a certain gas flow rate, a yield of nearly 90% of centimeterlong TWNTs is obtained. The TWNTs show an unprecedented structural homogeneity, in which each shell maintains a constant chiral index extending over a very large distance (>60mm). The semiconducting TWNTs can be directly fabricated into field-effect transistors. (Figure Presented)

AB - Direct growth of 100 mm long, semiconducting triple-walled carbon nanotubes (TWNTs) on Si substrates by chemical vapor depoistion is reported. By tailoring the temperature for a certain gas flow rate, a yield of nearly 90% of centimeterlong TWNTs is obtained. The TWNTs show an unprecedented structural homogeneity, in which each shell maintains a constant chiral index extending over a very large distance (>60mm). The semiconducting TWNTs can be directly fabricated into field-effect transistors. (Figure Presented)

UR - https://www.scopus.com/pages/publications/77951596296

U2 - 10.1002/adma.200902746

DO - 10.1002/adma.200902746

M3 - Article

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AN - SCOPUS:77951596296

SN - 0935-9648

VL - 22

SP - 1867

EP - 1871

JO - Advanced Materials

JF - Advanced Materials

IS - 16

ER -

100 mm long, semiconducting triple-walled carbon nanotubes

Abstract

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