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0D van der Waals interfacial ferroelectricity

  • Yue Niu
  • , Lei Li
  • , Zhiying Qi
  • , Hein Htet Aung
  • , Xinyi Han
  • , Reshef Tenne
  • , Yugui Yao
  • , Alla Zak
  • , Yao Guo*
  • *Corresponding author for this work
  • Beijing Institute of Technology
  • Weizmann Institute of Science
  • Holon Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.

Original languageEnglish
Article number5578
JournalNature Communications
Volume14
Issue number1
DOIs
Publication statusPublished - Dec 2023
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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