高纯度钛的应用与制备研究进展

High-purity titanium with a purity of no less than 4N is a critical raw material for titanium target materials used in integrated circuit manufacturing. The shrinking feature sizes of semiconductor devices impose higher requirements not only on the purity of high-purity titanium but also on its extremely low oxygen content. However, the high chemical reactivity and oxygen affinity of titanium pose challenges to the stable and cost-effective production of high-purity, low-oxygen titanium. To address this unique property of titanium, various purification methods are often combined for industrial-scale production of high-purity titanium, and extensive research has been conducted on the types and pathways of impurities introduced by different purification methods, aiming to remove various impurities from titanium to achieve stable production of high-purity, low-oxygen titanium. This paper discusses the main methods involved in its industrial production, including the Kroll process, molten salt electrolysis, iodide process, and electron beam melting. The preparation and purification methods of important titanium halides involved in these methods are summarized. Finally, a comparative analysis of these main production methods is conducted, highlighting the advantages and challenges of the iodide process in the industrial production of high-purity, low-oxygen titanium.