基于 0. 7 μm InP HBT 工艺的宽带差分行波放大器

This paper presents a broadband differential traveling-wave amplifier (TWA) based on 0. 7 μm indium phosphide (InP) double-heterojunction bipolar transistor technology. The TWA integrates three gain cells, each designed with a cascode topology to achieve high gain. An emitter resistive degeneration is incorporated within each gain cell to reach a broad bandwidth. The collector bias is slightly below the value for the maximum current gain, which allows a frequency-invariant high-output power characteristic with a flat group delay. The TWA exhibits a gain of 13. 3 dB ranging from DC to 80. 6 GHz. It consumes 84 mA of DC current and an output power at 1 dB compression point (P1 dB) of 11 dBm. Moreover, the group delay satisfies the 12 ps fluctuation in the bandwidth range, and the flat group delay makes the traveling wave amplifier have important application value in high-speed optical communication systems, and has reference value for promoting the localization process of core devices.