Structure and Electrical Properties of (111)-Oriented Pb(Mg1/3Nb2/3)O3—PbZrO3—PbTiO3 Thin Film for Ultra-High-Frequency Transducer Applications

Ben Peng Zhu; Wan Ke Guo; Ben Peng Zhu; Qifa Zhou; K. Kirk Shung; Ben Peng Zhu; Guo Zhen Shen

doi:10.1109/TUFFC.2011.2038

Structure and Electrical Properties of (111)-Oriented Pb(Mg_1/3Nb_2/3)O₃—PbZrO₃—PbTiO₃ Thin Film for Ultra-High-Frequency Transducer Applications

Ben Peng Zhu, Wan Ke Guo, Ben Peng Zhu, Qifa Zhou, K. Kirk Shung, Ben Peng Zhu, Guo Zhen Shen

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2 引用（Scopus）

摘要

Ternary lead magnesium niobate-lead zirconate titanate system 0.4Pb(Mg_1/3Nb_2/3)O₃-0.25PbZrO₃-0.35PbTiO₃ (40PMN-25PZ-35PT) thin film with a thickness of 1.5 µm was grown on Pt(111)/Ti/SiO₂/Si substrate via chemical solution deposition. X-ray diffraction and transmission electron microscopy results suggested the film obtained was highly (111)-oriented. The remanent polarization and coercive electric field of the film were found to be 25.5 µC/cm² and 51 kV/cm, respectively. In addition, at 1 kHz, the dielectric constant was measured to be 1960 and the dielectric loss 0.036. The film was observed to undergo a diffuse ferroelectric-to-paraelectric phase transition at around 209°C. The leakage current appeared to depend on the voltage polarity. If the Au electrode was biased positively, the leakage current was dominated by the Schottky emission mechanism. When the Pt electrode was biased positively, the conduction current curve showed an ohmic behavior at a low electric field and space-charge-limited current characteristics at a high electric field.

源语言	英语
页（从-至）	1962-1967
页数	6
期刊	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
卷	58
期	9
DOI	https://doi.org/10.1109/TUFFC.2011.2038
出版状态	已出版 - 9月 2011
已对外发布	是

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10.1109/TUFFC.2011.2038

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Zhu, B. P., Guo, W. K., Zhu, B. P., Zhou, Q., Shung, K. K., Zhu, B. P., & Shen, G. Z. (2011). Structure and Electrical Properties of (111)-Oriented Pb(Mg_1/3Nb_2/3)O₃—PbZrO₃—PbTiO₃ Thin Film for Ultra-High-Frequency Transducer Applications. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 58(9), 1962-1967. https://doi.org/10.1109/TUFFC.2011.2038

@article{7cfe7944ec634b29ad6594bde8645cc6,

title = "Structure and Electrical Properties of (111)-Oriented Pb(Mg1/3Nb2/3)O3—PbZrO3—PbTiO3 Thin Film for Ultra-High-Frequency Transducer Applications",

abstract = "Ternary lead magnesium niobate-lead zirconate titanate system 0.4Pb(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 (40PMN-25PZ-35PT) thin film with a thickness of 1.5 µm was grown on Pt(111)/Ti/SiO2/Si substrate via chemical solution deposition. X-ray diffraction and transmission electron microscopy results suggested the film obtained was highly (111)-oriented. The remanent polarization and coercive electric field of the film were found to be 25.5 µC/cm2 and 51 kV/cm, respectively. In addition, at 1 kHz, the dielectric constant was measured to be 1960 and the dielectric loss 0.036. The film was observed to undergo a diffuse ferroelectric-to-paraelectric phase transition at around 209°C. The leakage current appeared to depend on the voltage polarity. If the Au electrode was biased positively, the leakage current was dominated by the Schottky emission mechanism. When the Pt electrode was biased positively, the conduction current curve showed an ohmic behavior at a low electric field and space-charge-limited current characteristics at a high electric field.",

author = "Zhu, {Ben Peng} and Guo, {Wan Ke} and Zhu, {Ben Peng} and Qifa Zhou and Shung, {K. Kirk} and Zhu, {Ben Peng} and Shen, {Guo Zhen}",

year = "2011",

month = sep,

doi = "10.1109/TUFFC.2011.2038",

language = "English",

volume = "58",

pages = "1962--1967",

journal = "IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control",

issn = "0885-3010",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

Zhu, BP, Guo, WK, Zhu, BP, Zhou, Q, Shung, KK, Zhu, BP & Shen, GZ 2011, 'Structure and Electrical Properties of (111)-Oriented Pb(Mg_1/3Nb_2/3)O₃—PbZrO₃—PbTiO₃ Thin Film for Ultra-High-Frequency Transducer Applications', IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 卷 58, 号码 9, 页码 1962-1967. https://doi.org/10.1109/TUFFC.2011.2038

Structure and Electrical Properties of (111)-Oriented Pb(Mg_1/3Nb_2/3)O₃—PbZrO₃—PbTiO₃ Thin Film for Ultra-High-Frequency Transducer Applications. / Zhu, Ben Peng; Guo, Wan Ke; Zhu, Ben Peng 等.
在: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 卷 58, 号码 9, 09.2011, 页码 1962-1967.

科研成果: 期刊稿件 › 文章 › 同行评审

TY - JOUR

T1 - Structure and Electrical Properties of (111)-Oriented Pb(Mg1/3Nb2/3)O3—PbZrO3—PbTiO3 Thin Film for Ultra-High-Frequency Transducer Applications

AU - Zhu, Ben Peng

AU - Guo, Wan Ke

AU - Zhu, Ben Peng

AU - Zhou, Qifa

AU - Shung, K. Kirk

AU - Zhu, Ben Peng

AU - Shen, Guo Zhen

PY - 2011/9

Y1 - 2011/9

N2 - Ternary lead magnesium niobate-lead zirconate titanate system 0.4Pb(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 (40PMN-25PZ-35PT) thin film with a thickness of 1.5 µm was grown on Pt(111)/Ti/SiO2/Si substrate via chemical solution deposition. X-ray diffraction and transmission electron microscopy results suggested the film obtained was highly (111)-oriented. The remanent polarization and coercive electric field of the film were found to be 25.5 µC/cm2 and 51 kV/cm, respectively. In addition, at 1 kHz, the dielectric constant was measured to be 1960 and the dielectric loss 0.036. The film was observed to undergo a diffuse ferroelectric-to-paraelectric phase transition at around 209°C. The leakage current appeared to depend on the voltage polarity. If the Au electrode was biased positively, the leakage current was dominated by the Schottky emission mechanism. When the Pt electrode was biased positively, the conduction current curve showed an ohmic behavior at a low electric field and space-charge-limited current characteristics at a high electric field.

AB - Ternary lead magnesium niobate-lead zirconate titanate system 0.4Pb(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 (40PMN-25PZ-35PT) thin film with a thickness of 1.5 µm was grown on Pt(111)/Ti/SiO2/Si substrate via chemical solution deposition. X-ray diffraction and transmission electron microscopy results suggested the film obtained was highly (111)-oriented. The remanent polarization and coercive electric field of the film were found to be 25.5 µC/cm2 and 51 kV/cm, respectively. In addition, at 1 kHz, the dielectric constant was measured to be 1960 and the dielectric loss 0.036. The film was observed to undergo a diffuse ferroelectric-to-paraelectric phase transition at around 209°C. The leakage current appeared to depend on the voltage polarity. If the Au electrode was biased positively, the leakage current was dominated by the Schottky emission mechanism. When the Pt electrode was biased positively, the conduction current curve showed an ohmic behavior at a low electric field and space-charge-limited current characteristics at a high electric field.

UR - http://www.scopus.com/inward/record.url?scp=85008561892&partnerID=8YFLogxK

U2 - 10.1109/TUFFC.2011.2038

DO - 10.1109/TUFFC.2011.2038

M3 - Article

AN - SCOPUS:85008561892

SN - 0885-3010

VL - 58

SP - 1962

EP - 1967

JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

IS - 9

ER -

Structure and Electrical Properties of (111)-Oriented Pb(Mg1/3Nb2/3)O3—PbZrO3—PbTiO3 Thin Film for Ultra-High-Frequency Transducer Applications

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Structure and Electrical Properties of (111)-Oriented Pb(Mg_1/3Nb_2/3)O₃—PbZrO₃—PbTiO₃ Thin Film for Ultra-High-Frequency Transducer Applications