摘要
Hierarchical Zn3P2 nanoribbon-ZnS nanowire heterostructures were synthesized by simple thermal evaporation of the mixture of ZnS and InP powders. Studies found that the synthesized hierarchical heterostructures consisted of single crystalline Zn3P2 nanoribbons with numerous single crystalline [0001]-oriented ZnS nanowires grown perpendicular to the Zn3P2 nanoribbons. The growth mechanism of the hierarchical heterostructures was investigated in detail by studying the intermediate samples synthesized at different times. Low-temperature cathodoluminescence properties of the heterostructures were investigated, where two emission bands centered at 600 nm and 790 nm were observed, corresponding to the defect-related emission of ZnS and band gap emission of Zn3P2, respectively. Single heterostructure-based devices were also fabricated to study their photoconducting properties, showing decent responses to lights with different wavelengths.
源语言 | 英语 |
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页(从-至) | 7305-7310 |
页数 | 6 |
期刊 | CrystEngComm |
卷 | 13 |
期 | 24 |
DOI | |
出版状态 | 已出版 - 21 12月 2011 |
已对外发布 | 是 |