Quantum efficiency enhancement for PtSi infrared detector by surface plasma waves

Bing Xin Kang; Hua Gao Li; Ling Xue Wang; Ping Xiong; Hong Bing Chen; Li Li; Yi Cai

doi:10.11972/j.issn.1001-9014.2016.05.008

Quantum efficiency enhancement for PtSi infrared detector by surface plasma waves

Bing Xin Kang, Hua Gao Li, Ling Xue Wang^*, Ping Xiong, Hong Bing Chen, Li Li, Yi Cai

^*此作品的通讯作者

光电学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

To enhance quantum efficiency of infrared detectors made of PtSi Schottky barrier, the flat interface of PtSi/p-silicon metal semiconductor was modified to a grating structure. The incident radiation can be coupled with the surface plasma waves within this structure, thus to improve the optical coupling efficiency of the PtSi infrared detector. Based on rigorous coupled-wave analysis method, parameters of the grating structure were optimized and electric field distributions at resonant wavelength were simulated. The quantitative relationship between the optical coupling efficiency and quantum efficiency of PtSi Schottky barrier infrared detector was discussed. Comparing with the flat structure, the average quantum efficiency is evenly increased twice in 3~5 μm wavelength range, and approximately 2.94 and 2.5 times at 3 μm and 3.4 μm, respectively.

源语言	英语
页（从-至）	550-556
页数	7
期刊	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
卷	35
期	5
DOI	https://doi.org/10.11972/j.issn.1001-9014.2016.05.008
出版状态	已出版 - 1 10月 2016

访问文件

10.11972/j.issn.1001-9014.2016.05.008

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{1d182bf2fca746568d48b131a2da8ab5,

title = "Quantum efficiency enhancement for PtSi infrared detector by surface plasma waves",

abstract = "To enhance quantum efficiency of infrared detectors made of PtSi Schottky barrier, the flat interface of PtSi/p-silicon metal semiconductor was modified to a grating structure. The incident radiation can be coupled with the surface plasma waves within this structure, thus to improve the optical coupling efficiency of the PtSi infrared detector. Based on rigorous coupled-wave analysis method, parameters of the grating structure were optimized and electric field distributions at resonant wavelength were simulated. The quantitative relationship between the optical coupling efficiency and quantum efficiency of PtSi Schottky barrier infrared detector was discussed. Comparing with the flat structure, the average quantum efficiency is evenly increased twice in 3~5 μm wavelength range, and approximately 2.94 and 2.5 times at 3 μm and 3.4 μm, respectively.",

keywords = "Grating coupling, PtSi infrared detector, Quantum efficiency, Surface plasma waves",

author = "Kang, {Bing Xin} and Li, {Hua Gao} and Wang, {Ling Xue} and Ping Xiong and Chen, {Hong Bing} and Li Li and Yi Cai",

year = "2016",

month = oct,

day = "1",

doi = "10.11972/j.issn.1001-9014.2016.05.008",

language = "English",

volume = "35",

pages = "550--556",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "5",

}

TY - JOUR

T1 - Quantum efficiency enhancement for PtSi infrared detector by surface plasma waves

AU - Kang, Bing Xin

AU - Li, Hua Gao

AU - Wang, Ling Xue

AU - Xiong, Ping

AU - Chen, Hong Bing

AU - Li, Li

AU - Cai, Yi

PY - 2016/10/1

Y1 - 2016/10/1

N2 - To enhance quantum efficiency of infrared detectors made of PtSi Schottky barrier, the flat interface of PtSi/p-silicon metal semiconductor was modified to a grating structure. The incident radiation can be coupled with the surface plasma waves within this structure, thus to improve the optical coupling efficiency of the PtSi infrared detector. Based on rigorous coupled-wave analysis method, parameters of the grating structure were optimized and electric field distributions at resonant wavelength were simulated. The quantitative relationship between the optical coupling efficiency and quantum efficiency of PtSi Schottky barrier infrared detector was discussed. Comparing with the flat structure, the average quantum efficiency is evenly increased twice in 3~5 μm wavelength range, and approximately 2.94 and 2.5 times at 3 μm and 3.4 μm, respectively.

AB - To enhance quantum efficiency of infrared detectors made of PtSi Schottky barrier, the flat interface of PtSi/p-silicon metal semiconductor was modified to a grating structure. The incident radiation can be coupled with the surface plasma waves within this structure, thus to improve the optical coupling efficiency of the PtSi infrared detector. Based on rigorous coupled-wave analysis method, parameters of the grating structure were optimized and electric field distributions at resonant wavelength were simulated. The quantitative relationship between the optical coupling efficiency and quantum efficiency of PtSi Schottky barrier infrared detector was discussed. Comparing with the flat structure, the average quantum efficiency is evenly increased twice in 3~5 μm wavelength range, and approximately 2.94 and 2.5 times at 3 μm and 3.4 μm, respectively.

KW - Grating coupling

KW - PtSi infrared detector

KW - Quantum efficiency

KW - Surface plasma waves

UR - http://www.scopus.com/inward/record.url?scp=84992093333&partnerID=8YFLogxK

U2 - 10.11972/j.issn.1001-9014.2016.05.008

DO - 10.11972/j.issn.1001-9014.2016.05.008

M3 - Article

AN - SCOPUS:84992093333

SN - 1001-9014

VL - 35

SP - 550

EP - 556

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 5

ER -

Quantum efficiency enhancement for PtSi infrared detector by surface plasma waves

摘要

访问文件

其它文件与链接

指纹

引用此