Piezoelectric coefficient of InN thin films prepared by magnetron sputtering

C. B. Cao; H. L.W. Chan; C. L. Choy

doi:10.1016/S0040-6090(03)00889-7

Piezoelectric coefficient of InN thin films prepared by magnetron sputtering

C. B. Cao^*, H. L.W. Chan, C. L. Choy

^*此作品的通讯作者

材料学院

Hong Kong Polytechnic University

科研成果: 期刊稿件 › 文章 › 同行评审

9 引用（Scopus）

摘要

Indium nitride (InN) thin films have been deposited on Si(1 0 0) and Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by reactive r.f. magnetron sputtering. By using a plasma power of 25 W, nitrogen gas pressure of 5-7 mTorr and substrate temperature of 300-400 °C, InN films with (0 0 0 2) orientation were obtained. The relative permittivity and electrical resistivity of the InN film were calculated from the measured electrical impedance. The piezoelectric coefficient d₃₃ of the InN film was measured by a heterodyne interferometer and found to be 3.12 ± 0.10 pm V^-1.

源语言	英语
页（从-至）	287-291
页数	5
期刊	Thin Solid Films
卷	441
期	1-2
DOI	https://doi.org/10.1016/S0040-6090(03)00889-7
出版状态	已出版 - 22 9月 2003

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title = "Piezoelectric coefficient of InN thin films prepared by magnetron sputtering",

abstract = "Indium nitride (InN) thin films have been deposited on Si(1 0 0) and Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by reactive r.f. magnetron sputtering. By using a plasma power of 25 W, nitrogen gas pressure of 5-7 mTorr and substrate temperature of 300-400 °C, InN films with (0 0 0 2) orientation were obtained. The relative permittivity and electrical resistivity of the InN film were calculated from the measured electrical impedance. The piezoelectric coefficient d33 of the InN film was measured by a heterodyne interferometer and found to be 3.12 ± 0.10 pm V-1.",

keywords = "Indium nitride, Magnetron sputtering, Piezoelectric coefficient",

author = "Cao, {C. B.} and Chan, {H. L.W.} and Choy, {C. L.}",

year = "2003",

month = sep,

day = "22",

doi = "10.1016/S0040-6090(03)00889-7",

language = "English",

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TY - JOUR

T1 - Piezoelectric coefficient of InN thin films prepared by magnetron sputtering

AU - Cao, C. B.

AU - Chan, H. L.W.

AU - Choy, C. L.

PY - 2003/9/22

Y1 - 2003/9/22

N2 - Indium nitride (InN) thin films have been deposited on Si(1 0 0) and Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by reactive r.f. magnetron sputtering. By using a plasma power of 25 W, nitrogen gas pressure of 5-7 mTorr and substrate temperature of 300-400 °C, InN films with (0 0 0 2) orientation were obtained. The relative permittivity and electrical resistivity of the InN film were calculated from the measured electrical impedance. The piezoelectric coefficient d33 of the InN film was measured by a heterodyne interferometer and found to be 3.12 ± 0.10 pm V-1.

AB - Indium nitride (InN) thin films have been deposited on Si(1 0 0) and Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by reactive r.f. magnetron sputtering. By using a plasma power of 25 W, nitrogen gas pressure of 5-7 mTorr and substrate temperature of 300-400 °C, InN films with (0 0 0 2) orientation were obtained. The relative permittivity and electrical resistivity of the InN film were calculated from the measured electrical impedance. The piezoelectric coefficient d33 of the InN film was measured by a heterodyne interferometer and found to be 3.12 ± 0.10 pm V-1.

KW - Indium nitride

KW - Magnetron sputtering

KW - Piezoelectric coefficient

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U2 - 10.1016/S0040-6090(03)00889-7

DO - 10.1016/S0040-6090(03)00889-7

M3 - Article

AN - SCOPUS:0042509894

SN - 0040-6090

VL - 441

SP - 287

EP - 291

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Piezoelectric coefficient of InN thin films prepared by magnetron sputtering

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