Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition

Y. Q. Wang, R. Z. Wang*, B. B. Wang, B. Wang, H. Yan

*此作品的通讯作者

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

Gallium n itride nanowires (GaN NWs) were synthesized by plasma-enhanced hot filament chemical vapor deposition. The structures and photoluminescence properties were measured and analyzed.

源语言英语
主期刊名Nanophotonics, Nanoelectronics and Nanosensor, N3 2013
出版商Optical Society of America (OSA)
NSa4A.2
ISBN(印刷版)9781557529763
DOI
出版状态已出版 - 2013
已对外发布
活动Nanophotonics, Nanoelectronics and Nanosensor, N3 2013 - Wuhan, 中国
期限: 25 5月 201326 5月 2013

出版系列

姓名Nanophotonics, Nanoelectronics and Nanosensor, N3 2013

会议

会议Nanophotonics, Nanoelectronics and Nanosensor, N3 2013
国家/地区中国
Wuhan
时期25/05/1326/05/13

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