TY - JOUR
T1 - Oxygen Promotes the Formation of MoSe2at the Interface of Cu2ZnSnSe4/Mo
AU - Wu, Jianyu
AU - Zhang, Shengli
AU - Guo, Hongling
AU - Wu, Xu
AU - Li, Hui
AU - Liu, Yue
AU - Shen, Zhan
AU - Wu, Li
AU - Wang, Weihuang
AU - Zhang, Yi
N1 - Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/5/13
Y1 - 2021/5/13
N2 - The contact, and thus the hole collection between Cu2ZnSnSe4 (CZTSe) and Mo, is a crucial issue to improve the performance of CZTSe solar cells. In this work, a method to improve the back contact is explored by spraying Na3PO4 on the surface of the Mo back contact. With the O provided from Na3PO4, extra MoO2 and MoO3 are formed at the surface of the back contact, and partial MoO2 is transformed into MoSe2 under high Se2 partial pressure during the selenization process. The formation of MoSe2 progresses from dispersed spots to a continuous layer but not from the reaction between CZTSe and Mo. Although a thick MoSe2 layer is formed, the CZTSe device performance increases from 7.2% to 8.3% on average. This study affords new insight into the formation of MoSe2, thus deeply strengthening the understanding of the back contact of kesterite solar cells and of two-dimensional chalcogenide devices.
AB - The contact, and thus the hole collection between Cu2ZnSnSe4 (CZTSe) and Mo, is a crucial issue to improve the performance of CZTSe solar cells. In this work, a method to improve the back contact is explored by spraying Na3PO4 on the surface of the Mo back contact. With the O provided from Na3PO4, extra MoO2 and MoO3 are formed at the surface of the back contact, and partial MoO2 is transformed into MoSe2 under high Se2 partial pressure during the selenization process. The formation of MoSe2 progresses from dispersed spots to a continuous layer but not from the reaction between CZTSe and Mo. Although a thick MoSe2 layer is formed, the CZTSe device performance increases from 7.2% to 8.3% on average. This study affords new insight into the formation of MoSe2, thus deeply strengthening the understanding of the back contact of kesterite solar cells and of two-dimensional chalcogenide devices.
UR - http://www.scopus.com/inward/record.url?scp=85106355757&partnerID=8YFLogxK
U2 - 10.1021/acs.jpclett.1c01094
DO - 10.1021/acs.jpclett.1c01094
M3 - Article
C2 - 33955771
AN - SCOPUS:85106355757
SN - 1948-7185
VL - 12
SP - 4447
EP - 4452
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 18
ER -