摘要
Photoluminescence (PL) properties of individual CdSe nanowires with diameters beyond the quantum confinement regime have been studied. A blue-shift in the PL spectra was observed with decreasing nanowire diameter. We attribute the blue-shift to band-filling effect. Carrier density induced by surface vacancy doping and laser excitation is found to be high enough to meet the criterion of the band-filling effect and increases with decreasing nanowire diameter. Temperature dependent PL analysis and characterizations of a single CdSe nanowire based field-effect transistor were also performed.
源语言 | 英语 |
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文章编号 | 103103 |
期刊 | Applied Physics Letters |
卷 | 99 |
期 | 10 |
DOI | |
出版状态 | 已出版 - 5 9月 2011 |
已对外发布 | 是 |