Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials

Linghai Meng; Xian Gang Wu; Sai Ma; Lifu Shi; Mengjiao Zhang; Lingxue Wang; Yu Chen; Qi Chen; Haizheng Zhong

doi:10.1515/nanoph-2019-0320

Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials

Linghai Meng, Xian Gang Wu, Sai Ma, Lifu Shi, Mengjiao Zhang, Lingxue Wang, Yu Chen^*, Qi Chen, Haizheng Zhong

^*此作品的通讯作者

Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

38 引用（Scopus）

摘要

Luminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH₃NH₃PbBr₃ (CH₃NH₃ = methylammonium, MAPbBr₃) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (η_LDS) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.

源语言	英语
页（从-至）	93-100
页数	8
期刊	Nanophotonics
卷	9
期	1
DOI	https://doi.org/10.1515/nanoph-2019-0320
出版状态	已出版 - 1 1月 2020

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title = "Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials",

abstract = "Luminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH3NH3PbBr3 (CH3NH3 = methylammonium, MAPbBr3) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (ηLDS) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.",

keywords = "composite films, luminescence downshifting, perovskite, quantum dots, silicon solar cells",

author = "Linghai Meng and Wu, {Xian Gang} and Sai Ma and Lifu Shi and Mengjiao Zhang and Lingxue Wang and Yu Chen and Qi Chen and Haizheng Zhong",

note = "Publisher Copyright: {\textcopyright} 2019 Yu Chen et al., published by De Gruyter, Berlin/Boston 2020.",

year = "2020",

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doi = "10.1515/nanoph-2019-0320",

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T1 - Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials

AU - Meng, Linghai

AU - Wu, Xian Gang

AU - Ma, Sai

AU - Shi, Lifu

AU - Zhang, Mengjiao

AU - Wang, Lingxue

AU - Chen, Yu

AU - Chen, Qi

AU - Zhong, Haizheng

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Luminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH3NH3PbBr3 (CH3NH3 = methylammonium, MAPbBr3) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (ηLDS) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.

AB - Luminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH3NH3PbBr3 (CH3NH3 = methylammonium, MAPbBr3) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (ηLDS) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.

KW - composite films

KW - luminescence downshifting

KW - perovskite

KW - quantum dots

KW - silicon solar cells

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U2 - 10.1515/nanoph-2019-0320

DO - 10.1515/nanoph-2019-0320

M3 - Article

AN - SCOPUS:85076147199

SN - 2192-8606

VL - 9

SP - 93

EP - 100

JO - Nanophotonics

JF - Nanophotonics

IS - 1

ER -

Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials

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