Field emission from nanostructured AlN/GaN films on Si substrate prepared by pulsed laser deposition

Wei Zhao, Ruzhi Wang*, Fengying Wang, Siying Chen, Bo Wang, Hao Wang, Hui Yan

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

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摘要

Nanostructured AlN/GaN films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also deposited for comparison. It is found that the turn-on field of the nanostructured AlN/GaN films is considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of field emission (FE) characteristics is attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of AlN/GaN, various FE characteristics can be obtained. It indicates that the optimal thickness of the nanostructured AlN/GaN films exists for their best field emission performance.

源语言英语
页(从-至)10817-10820
页数4
期刊Journal of Nanoscience and Nanotechnology
11
12
DOI
出版状态已出版 - 2011

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