@inproceedings{264fcdaeaa7e4b8598b70e5d7987b6d3,
title = "A 110-160GHz Wideband Power Amplifier in 0.13μm SiGe BiCMOS with 14.12dBm Psat and 9.26% PAE",
abstract = "This paper presents a single-ended wideband power amplifier (PA) in 130nm SiGe process, which achieves a wide operating frequency range, while also exhibiting considerable saturated output power and efficiency. In order to extended bandwidth, low-Q impedance matching networks are adopted. Cascode topology and gain-boosting technology are also employed to improve the efficiency and saturated output power, respectively. Verified by the EM simulation of passive components and post-simulation, the PA operates from 110GHz to 163GHz (3dB bandwidth) with a peak gain of 24dB at 140GHz. Consuming DC power of 0.26W from 2.8-V supply voltage, the PA achieves peak output power of 14.12 dBm at 150GHz and competitive power-added-efficiency (PAE) of 9.2% over the bandwidth from 144GHz to 156GHz. The chip occupies an area of 0.26 mm2 excluding the pads.",
keywords = "D-band, Index-terms, Power Amplifiers, SiGe, Wide-band matching network, Wideband",
author = "Liang Zhao and Yao Li and Weihua Yu and Xin Lv",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE MTT-S International Wireless Symposium, IWS 2023 ; Conference date: 14-05-2023 Through 17-05-2023",
year = "2023",
doi = "10.1109/IWS58240.2023.10222178",
language = "English",
series = "2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Proceedings",
address = "United States",
}