Thickness effect on electrical properties of Pb(Zr0.52Ti0.48)O3 thick films embedded with ZnO nanowhiskers prepared by a hybrid sol-gel route

Q. L. Zhao; M. S. Cao; J. Yuan; R. Lu; D. W. Wang; D. Q. Zhang

doi:10.1016/j.matlet.2009.12.028

Thickness effect on electrical properties of Pb(Zr_0.52Ti_0.48)O₃ thick films embedded with ZnO nanowhiskers prepared by a hybrid sol-gel route

Q. L. Zhao, M. S. Cao^*, J. Yuan, R. Lu, D. W. Wang, D. Q. Zhang

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Silicon-based lead zirconate titanate thick films embedded with zinc oxide nanowhiskers (ZnO_w-PZT) were prepared by a hybrid sol-gel route. ZnO_w-PZT films with thickness from 1.5 μm to 4 μm are perovskite structure and have smooth surface without any cracks. As the thickness increases, the remanent polarization and dielectric constant increase, but the coercive field and tetragonality decrease. Compared with PZT films, the ZnO_w-PZT film has the close tetragonality and electrical properties which are different from those of bulk PZT-based ceramic doped with ZnO powder. The thickness dependences of the ferroelectric and dielectric properties are attributed to the relaxation of internal stress.

Original language	English
Pages (from-to)	632-635
Number of pages	4
Journal	Materials Letters
Volume	64
Issue number	5
DOIs	https://doi.org/10.1016/j.matlet.2009.12.028
Publication status	Published - 15 Mar 2010

Keywords

Electrical properties
Ferroelectrics
Sol-gel preparation
Thick films

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10.1016/j.matlet.2009.12.028

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title = "Thickness effect on electrical properties of Pb(Zr0.52Ti0.48)O3 thick films embedded with ZnO nanowhiskers prepared by a hybrid sol-gel route",

abstract = "Silicon-based lead zirconate titanate thick films embedded with zinc oxide nanowhiskers (ZnOw-PZT) were prepared by a hybrid sol-gel route. ZnOw-PZT films with thickness from 1.5 μm to 4 μm are perovskite structure and have smooth surface without any cracks. As the thickness increases, the remanent polarization and dielectric constant increase, but the coercive field and tetragonality decrease. Compared with PZT films, the ZnOw-PZT film has the close tetragonality and electrical properties which are different from those of bulk PZT-based ceramic doped with ZnO powder. The thickness dependences of the ferroelectric and dielectric properties are attributed to the relaxation of internal stress.",

keywords = "Electrical properties, Ferroelectrics, Sol-gel preparation, Thick films",

author = "Zhao, {Q. L.} and Cao, {M. S.} and J. Yuan and R. Lu and Wang, {D. W.} and Zhang, {D. Q.}",

year = "2010",

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doi = "10.1016/j.matlet.2009.12.028",

language = "English",

volume = "64",

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journal = "Materials Letters",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Thickness effect on electrical properties of Pb(Zr0.52Ti0.48)O3 thick films embedded with ZnO nanowhiskers prepared by a hybrid sol-gel route

AU - Zhao, Q. L.

AU - Cao, M. S.

AU - Yuan, J.

AU - Lu, R.

AU - Wang, D. W.

AU - Zhang, D. Q.

PY - 2010/3/15

Y1 - 2010/3/15

N2 - Silicon-based lead zirconate titanate thick films embedded with zinc oxide nanowhiskers (ZnOw-PZT) were prepared by a hybrid sol-gel route. ZnOw-PZT films with thickness from 1.5 μm to 4 μm are perovskite structure and have smooth surface without any cracks. As the thickness increases, the remanent polarization and dielectric constant increase, but the coercive field and tetragonality decrease. Compared with PZT films, the ZnOw-PZT film has the close tetragonality and electrical properties which are different from those of bulk PZT-based ceramic doped with ZnO powder. The thickness dependences of the ferroelectric and dielectric properties are attributed to the relaxation of internal stress.

AB - Silicon-based lead zirconate titanate thick films embedded with zinc oxide nanowhiskers (ZnOw-PZT) were prepared by a hybrid sol-gel route. ZnOw-PZT films with thickness from 1.5 μm to 4 μm are perovskite structure and have smooth surface without any cracks. As the thickness increases, the remanent polarization and dielectric constant increase, but the coercive field and tetragonality decrease. Compared with PZT films, the ZnOw-PZT film has the close tetragonality and electrical properties which are different from those of bulk PZT-based ceramic doped with ZnO powder. The thickness dependences of the ferroelectric and dielectric properties are attributed to the relaxation of internal stress.

KW - Electrical properties

KW - Ferroelectrics

KW - Sol-gel preparation

KW - Thick films

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U2 - 10.1016/j.matlet.2009.12.028

DO - 10.1016/j.matlet.2009.12.028

M3 - Article

AN - SCOPUS:73649142712

SN - 0167-577X

VL - 64

SP - 632

EP - 635

JO - Materials Letters

JF - Materials Letters

IS - 5

ER -

Thickness effect on electrical properties of Pb(Zr_0.52Ti_0.48)O₃ thick films embedded with ZnO nanowhiskers prepared by a hybrid sol-gel route

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Keywords

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