Ka-band quasioptical detectors based on antenna-integrated planar Schottky diodes

Jinchao Mou; Xin Lv; Yong Yuan; Weihua Yu

doi:10.1002/mop.26168

Ka-band quasioptical detectors based on antenna-integrated planar Schottky diodes

Jinchao Mou^*, Xin Lv, Yong Yuan, Weihua Yu

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This letter presents a quasioptical monolithic detector for Ka-band applications.It consists of an antenna-integrated planar Schottky diode and an extended semispherical lens. A three-dimensional electromagnetic model is built for evaluating its radiation performance. The responsivity of the detector ranges from 712 to 1483 mV mW^-1 over 26.5∼40 GHz under the bias voltage of 0.8 V, corresponding to the estimated noise equivalent power between 2.5E-11 and 5.2E-11 W Hz^-1/2. The radiation patterns are measured and agree well with the simulated ones, showing the validity of the proposed model.

Original language	English
Pages (from-to)	2019-2022
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	53
Issue number	9
DOIs	https://doi.org/10.1002/mop.26168
Publication status	Published - Sept 2011

Keywords

antenna-integrated Schottky diode
extended semispherical lens
quasioptical detector

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10.1002/mop.26168

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abstract = "This letter presents a quasioptical monolithic detector for Ka-band applications.It consists of an antenna-integrated planar Schottky diode and an extended semispherical lens. A three-dimensional electromagnetic model is built for evaluating its radiation performance. The responsivity of the detector ranges from 712 to 1483 mV mW-1 over 26.5∼40 GHz under the bias voltage of 0.8 V, corresponding to the estimated noise equivalent power between 2.5E-11 and 5.2E-11 W Hz-1/2. The radiation patterns are measured and agree well with the simulated ones, showing the validity of the proposed model.",

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AU - Mou, Jinchao

AU - Lv, Xin

AU - Yuan, Yong

AU - Yu, Weihua

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N2 - This letter presents a quasioptical monolithic detector for Ka-band applications.It consists of an antenna-integrated planar Schottky diode and an extended semispherical lens. A three-dimensional electromagnetic model is built for evaluating its radiation performance. The responsivity of the detector ranges from 712 to 1483 mV mW-1 over 26.5∼40 GHz under the bias voltage of 0.8 V, corresponding to the estimated noise equivalent power between 2.5E-11 and 5.2E-11 W Hz-1/2. The radiation patterns are measured and agree well with the simulated ones, showing the validity of the proposed model.

AB - This letter presents a quasioptical monolithic detector for Ka-band applications.It consists of an antenna-integrated planar Schottky diode and an extended semispherical lens. A three-dimensional electromagnetic model is built for evaluating its radiation performance. The responsivity of the detector ranges from 712 to 1483 mV mW-1 over 26.5∼40 GHz under the bias voltage of 0.8 V, corresponding to the estimated noise equivalent power between 2.5E-11 and 5.2E-11 W Hz-1/2. The radiation patterns are measured and agree well with the simulated ones, showing the validity of the proposed model.

KW - antenna-integrated Schottky diode

KW - extended semispherical lens

KW - quasioptical detector

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

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ER -

Ka-band quasioptical detectors based on antenna-integrated planar Schottky diodes

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Keywords

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