Electrical properties of lead zirconate titanate thick film containing micro- and nano-crystalline particles

Ran Lu, Gen Shan Jiang, Bin Li, Quan Liang Zhao, De Qing Zhang, Jie Yuan, Mao Sheng Cao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We report the ferroelectric, dielectric and piezoelectric properties of a dense and crack-free lead zirconate titanate (Pb(Zr0.52Ti 0.48)O3, PZT) thick film containing micro- and nano-crystalline particles. The results show that these electrical properties are dependent strongly on the annealing temperature and film thickness. For the different-annealing-temperature and different-thickness films, the higher-annealing-temperature thicker ones show the larger remnant polarization and smaller coercive field. The dielectric results show that relative dielectric constant achieves the largest value at annealing temperature of 700°C, and increases with the increasing film thickness. For the piezoelectric properties, the longitudinal piezoelectric coefficient increases linearly with the film thickness increasing and the 4-μm-thick PZT film shows the largest value of about 200.65 pC/N. Therefore, the PZT thick films present good electric properties and enlarged potential in MEMS applications.

Original languageEnglish
Article number058101
JournalChinese Physics Letters
Volume29
Issue number5
DOIs
Publication statusPublished - May 2012

Fingerprint

Dive into the research topics of 'Electrical properties of lead zirconate titanate thick film containing micro- and nano-crystalline particles'. Together they form a unique fingerprint.

Cite this