@inproceedings{9b4bbfa3bfa24d7b80ad8f9ffe13408c,
title = "Design of a Ka-band broadband SPDT switch MMIC based on GaN HEMTs",
abstract = "Based on GaN HEMTs, a Ka-band SPDT switch MMIC is designed and simulated in this paper. The circuit topology and characteristics of the GaN MMIC are designed and optimized. We employed computer simulation and adopted domestic epitaxial material and standard wafer fabrication process to achieve this design. The simulation results of this MMIC switch mentioned in this paper are shown as follow: the operating frequency range is 30-40GHz; the insertion loss is 1.861 dB; the isolation is 27.651 dB; the capability of power is higher than 7.94w; the switching time is less than 1 ns and the return loss is more than 18 dB, which lays the foundation for GaN T/R(Transmitter and Receiver) MMIC (Monolithic Microwave Integrated Circuit).",
keywords = "GaN, Ka-Band, MMIC, SPDT, broadband, switch",
author = "Dechun Guo and Tong Qiao and Xiaobin Luo and Mingxun Li",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 16th IEEE International Conference on Communication Technology, ICCT 2015 ; Conference date: 18-10-2015 Through 20-10-2015",
year = "2016",
month = feb,
day = "4",
doi = "10.1109/ICCT.2015.7399832",
language = "English",
series = "International Conference on Communication Technology Proceedings, ICCT",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "241--243",
booktitle = "Proceedings of 2015 IEEE 16th International Conference on Communication Technology, ICCT 2015",
address = "United States",
}