@inproceedings{b51976e8eedb458dbeefeaab9b8e3703,
title = "A High-efficiency 135 - 155 GHz Power Amplifier with Compact Three-Conductor Power Combiner Balun in 130-nm SiGe BiCMOS",
abstract = "A compact power amplifier (PA) design for D-band applications in 130nm SiGe BiCMOS technology with saturated output power (Psat) excess of 13dBm covering 20GHz operation bandwidth is presented. This architecture consisted of a three-stage driver and one-stage power differential configuration, and the compact three-conductor balun is embedded to improve the output power level. The design delivers 13dBm with 40dB gain from 135 - 155GHz, and the maximum Psat is 13.9dBm with a peak power-added-efficiency (PAE) of 24% at 145GHz. The proposed three-conductor balun achieves a good performance of transmission loss that is less than 1dB in the range of 130 - 170GHz, and the amplitude/phase imbalance is not more than 1dB / 3° covering 3-dB bandwidth, respectively. The 0.29W PA is capable of providing a good figure of merit (FoM) of 110 while occupying the core active area of 0.49",
keywords = "D-band, power amplifier, three-conductor balun",
author = "Yao Li and Liang Zhao and Weihua Yu",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE MTT-S International Wireless Symposium, IWS 2023 ; Conference date: 14-05-2023 Through 17-05-2023",
year = "2023",
doi = "10.1109/IWS58240.2023.10222761",
language = "English",
series = "2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Proceedings",
address = "United States",
}